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Распределение неосновных носителей заряда…
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The distribution of minority carriers in semi-infinite
semiconductor material with defects on the surface
after their diffusion from a thin planar source
© V.V. Kalmanovich
1
, M.A. Stepovich
1
, E.V. Seregina
2
, A.K. Gorbunov
2
1
Tsiolkovsky Kaluga State University, Kaluga, 248023, Russia
2
Bauman Moscow State Technical University, Kaluga branch, Kaluga, 28000, Russia
The article considers application of mathematical modeling methods for solving the
problem of diffusion of minority carriers (MC), generated in the semiconductor by wide
electron beam. The influence of defects on the semiconductor surface on the distribution
of MC after their diffusion from a thin planar source into a semi-infinite semiconductor
was investigated. The calculations were performed for various materials of semiconduc-
tor electronics.
Keywords:
distribution of minority carriers, defect, semiconductor materials, electron
beam.
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