И.С. Кутовой, И.Н. Радченко
6
Errors calculation in determining the target carrier density
for multicrystalline silicon ingots growth
© I.S. Kutovoy
1
, I.N. Radchenko
2
1
Helio-Resources, Ltd, Moscow Region, Mytischi, 141000, Russia
2
Kaluga Branch of Bauman Moscow State Technical University,
Kaluga, 248000, Russia
The article presents a description of methodology and gives the results of the calculation
of errors in determining the target concentration of charge carriers. We identified the
basic parameters affecting the accuracy of measurements of the electrical resistance at
the bar, obtained by using the described in the article downloads for growth ingots.
Keywords:
multicrystalline silicon, carrier density, electrical resistivity, error.
REFERENCES
[1] Nashelsky A.Ya.
Proizvodstvo poluprovodnikovykh materialov
[Production of
semiconductive materials]. Moscow, Metallurgiya Publ., 2003.
Kutovoy I.S.
(b. 1957) graduated from MISIS in 1980. Foreman of multicrystalline sili-
con ingots growth of Helio-Resources, Ltd,.Moscow region, Mytistchi. Author of several
articles on electronic materials technology (cadmium telluride, arsenic, multicrystalline
silicon). e-mail:
Radchenko I.N.
(b. 1961) graduated from the Leningrad Polytechnic Institute named
after M.I. Kalinin. Ph.D. (Phys.&Math.), Assoc. Professor of the Physics Department at
Kaluga Branch of Bauman Moscow State Technical University. Author of more than
40 scientific papers in the areas of electronics and solid-state physics.
e-mail:
