Особенности получения слаболегированных слоев алюминия-галлия арсенида для фотоприемных устройств

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С.С. Стрельченко, Н.И. Шумакин
6 Инженерный журнал: наука и инновации # 6·2017
Specifics of obtaining lightly-doped
aluminium gallium arsenide layers for photodetectors
© S.S. Strelchenko, N.I. Shumakin
Bauman Moscow State Technical University, Kaluga subsidiary, Kaluga, 248000, Russia
As follows from physical models of optoelectronic devices, lightly-doped aluminium gal-
lium arsenide layers make it possible to create epitaxial structures for highly efficient
photodetectors, solar energy phototransducers, temperature sensors, ionizing radiation
sensors. The article studies the possibility of obtaining a lightly-doped aluminium galli-
um arsenide layer via a new efficient liquid-phase epitaxy method by means of doping the
solution melt with rare earth elements or with analogues that allow the carrier concen-
tration to go down. We describe the advantages of using ytterbium over scandium for
doping solution melts. We consider possible mechanisms behind this phenomenon.
Keywords: heterostructure, complex doping, scandium, ytterbium
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Strelchenko S.S. (b. 1940) graduated from the Kharkov State University in 1963. Dr. Sc.
(Eng.), Professor, Department of Materials Science, Kaluga branch, Bauman Moscow
State Technical University. Full member of the Russian Academy of Engineering and
Russian Academy of Cosmonautics. Author of over 250 scientific publications in the
field of III–V epitaxial structure growth. Specialises in epitaxial films, III–V structures
and devices based on them. e-mail:
Shumakin N.I. (b. 1994) graduated from the Kaluga branch of Bauman Moscow State
Technical University in 2016. Graduate student, Department of Materials Science, Kalu-
ga branch, Bauman Moscow State Technical University. Specialises in epitaxial struc-
tures. e-mail: