Engineering Journal: Science and InnovationELECTRONIC SCIENCE AND ENGINEERING PUBLICATION
Certificate of Registration Media number Эл #ФС77-53688 of 17 April 2013. ISSN 2308-6033. DOI 10.18698/2308-6033
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Search by keyword: "MOS-structure"


High-field Injection Modification of Nano-thickness Dielectric Films in the MOS Devices

Published: 15.10.2013

Authors: Andreev V.V., Stolyarov A.A., Akhmelkin D.M., Romanov A.V.

Published in issue: #6(18)/2013

DOI: 10.18698/2308-6033-2013-6-802

Category: Nanoengineering

    MOS-structure, nano-thickness dielectric film, high-field, injection, gate dielectric
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Characteristics of low-resistance path in silicon suboxide thin films

Published: 15.10.2013

Authors: Zakharov P.S., Zayonchkovskiy V.S., Baskakov E.B.

Published in issue: #6(18)/2013

DOI: 10.18698/2308-6033-2013-6-797

Category: Nanoengineering

    MOS-structure, non-stoichiometric silicon oxide, Schottky effect, permittivity
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