Способ выращивания кристаллов в условиях управляемого градиента температуры…
9
A method of growing crystals under conditions of controlled
temperature gradient in the melt
©V.S. Sidorov
1
, V.I. Strelov
1
, I.Zh. Bezbakh
2
,
O.V. Kritsky
2
, I.N. Radchenko
2
1
SIC "Space Materials", Branch of the Crystallography Institute named after A.V. Shub-
nikov RAS, Kaluga, 248640, Russia
2
Kaluga Branch of Bauman Moscow State Technical University, Kaluga, 248000, Russia
A method of crystal growth has been developed for a directed crystallization using axial
temperature field shifting without sample or heater shifting. The control of axial thermal
flux providing constant rate of crystal growth is implemented by using two heaters ac-
cording to the data of thermocouples positioned along the axis above the crystal and be-
low it. The real-time control of all parameters of crystal growth is performed by the de-
veloped universal computer interface. The interface displays the temperature on the heat-
ers and the sample, its rate of change on all stages of growth process, controlling coeffi-
cients, amplitude, frequency and spectrum of digital Fourier transformation of applied
mechanical vibrations (accelerations), and also the inclination angle of crystal growth
axis from direction of gravity vector (g
0
). The setup allows experiments on physical mod-
eling of heat-and-mass transfer processes during semiconductor crystal growth. The set-
up allows conducting experiments on physical modeling of the processes of heat and mass
transfer in growing semiconductor crystals.
Keywords:
crystal, semiconductor, growth, thermocouple, control.
REFERENCES
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Kristallografiya — Crystallog-
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, 1998, no. 6, pp. 1136–1141.
[2] Strelov V.I., Zakharov B.G., Sidorov V.S
.
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, 2002, vol.
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chennykh metodom napravlennoi kristallizatsii [Uniformity of microcrystals grown
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(ICSS–2001),
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[4]
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soperenosa pri slabykh konvektivnykh techeniyakh [Features of heat and mass
transfer processes in weak convective flows].
Proc.of the Fifth International Con-
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, Obninsk, 2003, pp. 742–749.
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Poverkhnost'. Rentgenovskie, sink-
hrotronnye i neitronnye issledovaniya — The journal of Surface Investigation.
X-ray, Synchrotron and Neutron Techniques
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—
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, 1999, no. 2, pp. 148–152.
Sidorov V.S.
(b. 1943) graduated from the Tajik State University in 1970. Ph.D., Senior
Research Fellow in the Branch of Crystallography Institute named after A.V. Shubnikov
RAS, SIC "Space Materials". Author of more than 40 scientific papers in the fields of
crystal growth and solid state physics. e-mail:
