Measurement Device for Determining Accumulated Dose of Radiation with MOSFET-Sensors
Published: 24.03.2014
Authors: Andreev V.V., Stolyarov A.A., Solovev I.V.
Published in issue: #1(25)/2014
DOI: 10.18698/2308-6033-2014-1-1197
Category: Instrumentation
The article describes measurement devise for determining absorbed dose of radiation. A possibility of using Metal-Oxide-Semiconductor Field Effect Transistor as compact radiation sensors is shown. The article presents a determination method of the absorbed dose using the threshold voltage shift due to irradiation. Methods of improving the thermal stability of the measured characteristics have been considered.
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