Certificate of Registration Media number Эл #ФС77-53688 of 17 April 2013. ISSN 2308-6033. DOI 10.18698/2308-6033
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Specifics of obtaining lightly-doped aluminium gallium arsenide layers for photodetectors

Published: 12.05.2017

Authors: Strelchenko S.S., Shumakin N.I.

Published in issue: #6(66)/2017

DOI: 10.18698/2308-6033-2017-6-1628

Category: Metallurgy and Science of Materials | Chapter: Nanotechnologies and Nanomaterials Material Science

As follows from physical models of optoelectronic devices, lightly-doped aluminium gallium arsenide layers make it possible to create epitaxial structures for highly efficient photodetectors, solar energy phototransducers, temperature sensors, ionizing radiation sensors. The article studies the possibility of obtaining a lightly-doped aluminium gallium arsenide layer via a new efficient liquid-phase epitaxy method by means of doping the solution melt with rare earth elements or with analogues that allow the carrier concentration to go down. We describe the advantages of using ytterbium over scandium for doping solution melts. We consider possible mechanisms behind this phenomenon.

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