Engineering Journal: Science and InnovationELECTRONIC SCIENCE AND ENGINEERING PUBLICATION
Certificate of Registration Media number Эл #ФС77-53688 of 17 April 2013. ISSN 2308-6033. DOI 10.18698/2308-6033
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Article

Errors calculation in determining the target carrier density for multicrystalline silicon ingots growth

Published: 08.10.2014

Authors: Kutovoy I.S., Radchenko I.N.

Published in issue: #6(30)/2014

DOI: 10.18698/2308-6033-2014-6-1262

Category: Engineering | Chapter: Materials Science

The article presents a description of methodology and gives the results of the calculation of errors in determining the target concentration of charge carriers. We identified the basic parameters affecting the accuracy of measurements of the electrical resistance at the bar, obtained by using the described in the article downloads for growth ingots.


References
[1] Nashelsky A.Ya. Proizvodstvo poluprovodnikovykh materialov [Production of semiconductive materials]. Moscow, Metallurgiya Publ., 2003.