Errors calculation in determining the target carrier density for multicrystalline silicon ingots growth
Published: 08.10.2014
Authors: Kutovoy I.S., Radchenko I.N.
Published in issue: #6(30)/2014
DOI: 10.18698/2308-6033-2014-6-1262
Category: Engineering | Chapter: Materials Science
The article presents a description of methodology and gives the results of the calculation of errors in determining the target concentration of charge carriers. We identified the basic parameters affecting the accuracy of measurements of the electrical resistance at the bar, obtained by using the described in the article downloads for growth ingots.
References
[1] Nashelsky A.Ya. Proizvodstvo poluprovodnikovykh materialov [Production of semiconductive materials]. Moscow, Metallurgiya Publ., 2003.